Spectroscopic studies of Er-centers in MOCVD grown GaN layers highly doped with Er
نویسندگان
چکیده
We report on the high-resolution photoluminescence (PL) and electron spin resonance (ESR) studies of highly Er-doped (2× 1020 to × 1021 cm−3) MOCVD grown GaN epilayers. The high-resolution Fourier transform of the 4I → 4I PL of Er3+ near 1.5 m, site-selective 13/2 15/2 L and PL excitation measurements show that in MOCVD grown GaN only one type of Er-centers exists. This conclusion has been confirmed by SR measurements. In ESR the axial Er3+ spectrum was observed with g|| = 2.861 and g⊥ = 7.645 characteristic for substitutional Er ions at Ga ites (C3V symmetry). Angular dependence of the ESR did not point to the existence of other centers. 2007 Elsevier B.V. All rights reserved.
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